U.S. Yokota Air Base in Tokyo

TOKYO, Japan, Dec. 20 Kyodo - Video taken from a Kyodo News helicopter shows U.S. Yokota Air Base in western Tokyo on Dec. 20, 2024. (Kyodo)

JAPAN-TOKYO-U.S. MILITARY BASE-LEAKS CONTAINING PFAS

JAPAN-TOKYO-U.S. MILITARY BASE-LEAKS CONTAINING PFAS

(230706) -- TOKYO, July 6, 2023 (Xinhua) -- This file photo taken on June 19, 2022 shows the exterior view of U.S. Yokota base in Japan's western Tokyo area. U.S. Yokota base in Japan's western Tokyo area has acknowledged three incidents of leakage involving foam fire extinguishers containing per-and polyfluoroalkyl substances (PFAS), a group of organic fluorine compounds that raise health concerns, local media reported. TO GO WITH "U.S. military base in Tokyo admits leaks containing PFAS" (Xinhua/Zhang Xiaoyu)

JAPAN-TOKYO-U.S. MILITARY BASE-LEAKS CONTAINING PFAS

JAPAN-TOKYO-U.S. MILITARY BASE-LEAKS CONTAINING PFAS

(230706) -- TOKYO, July 6, 2023 (Xinhua) -- This file photo taken on June 19, 2022 shows the exterior view of U.S. Yokota base in Japan's western Tokyo area. U.S. Yokota base in Japan's western Tokyo area has acknowledged three incidents of leakage involving foam fire extinguishers containing per-and polyfluoroalkyl substances (PFAS), a group of organic fluorine compounds that raise health concerns, local media reported. TO GO WITH "U.S. military base in Tokyo admits leaks containing PFAS" (Xinhua/Zhang Xiaoyu)

JAPAN-TOKYO-U.S. MILITARY BASE-LEAKS CONTAINING PFAS

JAPAN-TOKYO-U.S. MILITARY BASE-LEAKS CONTAINING PFAS

(230706) -- TOKYO, July 6, 2023 (Xinhua) -- This file photo taken on June 19, 2022 shows the exterior view of U.S. Yokota base in Japan's western Tokyo area. U.S. Yokota base in Japan's western Tokyo area has acknowledged three incidents of leakage involving foam fire extinguishers containing per-and polyfluoroalkyl substances (PFAS), a group of organic fluorine compounds that raise health concerns, local media reported. TO GO WITH "U.S. military base in Tokyo admits leaks containing PFAS" (Xinhua/Zhang Xiaoyu)

Technology to etch Kai semiconductor with fluoroplastic instead of CFC gas

Technology to etch Kai semiconductor with fluoroplastic instead of CFC gas

The established technology will be used for dry etching, thin film formation and cleaning of silicon. Easy-to-handle gases such as argon and nitrogen are irradiated onto solid fluoropolymers to generate fluorine-containing gas. The gas is then used for plasma treatment. Using a proto device with electrodes developed for special equipment, the company irradiated nitrogen gas and etched a glass substrate, and was able to etch 40 nanometers in one minute. The company plans to achieve an etching speed of 200 nanometers for commercialization. Plasma is an unstable state in which electrons have been removed from molecules, and it modifies the surface of materials, improving adhesion and cleaning effects. (Photo taken on March 30, 2020, location unknown, credit: Nikkan Kogyo Shimbun / Kyodo News Images)