Technology to etch Kai semiconductor with fluoroplastic instead of CFC gas

Technology to etch Kai semiconductor with fluoroplastic instead of CFC gas

The established technology will be used for dry etching, thin film formation and cleaning of silicon. Easy-to-handle gases such as argon and nitrogen are irradiated onto solid fluoropolymers to generate fluorine-containing gas. The gas is then used for plasma treatment. Using a proto device with electrodes developed for special equipment, the company irradiated nitrogen gas and etched a glass substrate, and was able to etch 40 nanometers in one minute. The company plans to achieve an etching speed of 200 nanometers for commercialization. Plasma is an unstable state in which electrons have been removed from molecules, and it modifies the surface of materials, improving adhesion and cleaning effects. (Photo taken on March 30, 2020, location unknown, credit: Nikkan Kogyo Shimbun / Kyodo News Images)

  • Product Code
  • ILEA000801845
  • Registered date
  • 2020/3/30 00:00:00
  • Credit
  • THE NIKKAN KOGYO SHIMBUN / Kyodo News Images
  • Media source
  • THE NIKKAN KOGYO SHIMBUN
  • Media size
  • 3000 × 4000 pixel
  • Resolution
  • 180 dpi
  • Deployment size
  • 4.41(MB)*
  • Special instruction
  • **The text may be generated by an automatic translation system**

*File size when opened in Photoshop, etc.

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